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While the model of Tsui and Clyne yields already quite good quantitative estimates of the experimental radii in semiconductor nanoscrolls [69, 70], it does not provide a statement about the preferred rolling directions of epitaxial layer systems. Grundmann calculates the scroll radius by determining the minimum of the strain energy in single-crystalline semiconductor bilayer systems with respect to the bending radius r . He takes into account the cubic symmetry of zinc-blende semiconductors and predicts that 30 K.
3) with the above parameters. The very good reproduction of the measurements by the calculation results indicates that our simple growth model correctly describes the influence of strain on InAs quantum-dot formation. More elaborate models, which include, for instance, the strain inside the volume and the size distribution of the QDs are described in [27, 52]. In the next step, we have developed a model for the intermixing process by assuming kinetic exchange processes between deposited In atoms and Ga atoms from the substrate (Fig.
33 eV. (a) Power series (Ie D 8:5 : : : 450 W/cm2 ) of a LDE-QD sample with hQD D 7:6 nm. Dashed lines indicate calculated transition energies assuming a parabolic confinement potential. (b) Energy of the ground and excited states for LDE QDs as function of hQD . (c) Energy separations E10 –E00 , E20 –E10 , and EA –E00 taken from the data of (b). 39 In Fig. 13a, PL spectra of a sample with hQD D 7:6 nm are plotted for different excitation intensities Ie . 7 meV demonstrates the high homogeneity of the QD ensembles.